npn bux12 comset semiconductors 1/3 h h i i g g h h c c u u r r r r e e n n t t , , h h i i g g h h s s p p e e e e d d , , h h i i g g h h p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r the bux12 is silicon multiepitaxial pl anar npn transistors in jedec to-3. they are intended for use in switching and linear appications in military and industrial equipment. compliance to rohs absolute maximum ratings symbol unit v ceo collector-emitter voltage i b = 0 250 v v cbo collector-base voltage i e = 0 300 v v ebo emitter-base voltage i c = 0 7.0 v v cex collector-emitter voltage v be = -1.5v 300 v i c collector current 20 a i cm collector peak current t p = 10ms 25 a i b base current 4 a p t total power dissipation @ t c = 25 150 w t j junction temperature 200 c t st g storage temperature -65 to +200 c thermal characteristics symbol ratings value unit r thjc thermal resistance, junction to case 1.17 c/w
npn bux12 26/10/2012 comset semiconductors 3/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(sus) collector-emitter sustaining voltage (*) i c =200 ma 250 - - v v eb0(sus) emitter-base breakdown voltage (*) i c =0a, i e =50 ma 7 - - v i ceo collector cutoff current v ce =200 v, i b =0a - - 1.5 ma i cex collector cutoff current v ce = v cex , v be = -1.5v - - 1.5 ma v ce = v cex , v be = -1.5v t case = 125c - - 6 i ebo emitter cutoff current v eb =5.0 v, i c =0 - - 1 ma h fe dc current gain (*) i c =5 a, v ce =4.0 v 20 - 60 - i c =10 a, v ce =4.0 v 10 - - v ce(sat) collector-emitter saturation voltage (*) i c =5 a, i b =0.5 a - 0.22 1 v i c =10 a, i b =1.25 a - 0.5 1.5 v be ( sat ) base-emitter saturation voltage (*) i c =10 a, i b =1.25 a - 1.23 1.5 i s/b second breakdown collector current v ce =30 v, t s = 1s 5 - - a v ce =140 , t s = 1s 0.15 - - e s/b clamped e s/b collector current v clamp =250 v, l=500 h 10 - - a f t transition frequency v ce =15 v, i c =1 a f=10 mhz 8 - - mhz t on turn-on time i c =10 a, i b =1.25 a v cc =150 v - 0.28 1 s t s storage time i c =10 a, v cc =150 v i b1 = -i b2 =1.25 a - 1.45 2 t f file time - 0.23 0.5 (*) pulse duration = 300 s, duty cycle <= 2%
npn bux12 26/10/2012 comset semiconductors 3/3 mechanical data case to-3 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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